Process For Manufacturing Contact Elements For Probe Card Assembles

ABSTRACT

A process for making contact elements for a probe card assembly includes steps of forming a first continuous trench in a substrate along a first direction, and forming simultaneously a plurality of tip structures adjacent one to another in the first continuous trench in a second direction substantially normal to the first direction, each of the tip structures being part of, or adapted to be part of at least one corresponding contact element capable of forming an electrical contact with a terminal of an electronic device.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a non-provisional of U.S. Provisional Patent Application 61/120,814 filed Dec. 8, 2008 and entitled “Process For Manufacturing Contact Elements For Probe Card Assemblies.”

BACKGROUND

A probe card assembly is an apparatus typically used in testing an electronic device. The probe card assembly can function as an interface between a tester and the electronic device under test (DUT), which in some examples can be an integrated circuit either on a wafer or in singulated form. The tester and the probe card assembly can be electrically connected by a number of links. The probe card assembly can be electrically connected to the DUT via electrical contacts between contact elements, which can be customarily referred to as probes, of the assembly and terminals of the DUT. The tester can generate test signals to and receive test result signals from the DUT via the electrical path therebetween, and determine whether the DUT is defective based on the received test result signals.

Ideally, the contact elements (or probes) of the probe card assembly can have characteristics that are resilient such that the contact elements (or probes) exhibit primarily elastic behavior in response to an applied load or contact force. The contact elements can be typically arranged in an array with their corresponding tip structures forming a contour or plane to be matched with a contour or plane of the DUT. Because the contour of the tip structures of the contact elements may not perfectly match the contour of the DUT, some of the tip structures would contact the DUT earlier than others when the probe card assembly and DUT move toward each other relatively. The resilient characteristic of the contact elements enables the contour of the tip structures to match the contour of the DUT under pressure created by moving the probe card assembly and the DUT against each other. The contact elements can be resilient, so that they would not be crushed when the probe card assembly and the DUT are pushed against each other, and could return or return substantially to their initial positions when the DUT is moved away from the assembly. It is desired that the contact elements be reliable so that they can form electrical contacts repetitively in order to test a large number of DUTs.

As semiconductor processing technology advances, electronic devices become increasingly compact. Accordingly, the contact elements of the probe card assembly need to be made in an increasingly small pitch. Thus, technology innovation in the probe card industry is desired to meet design challenges in making contact elements for those ever shrinking electronic devices.

SUMMARY

Embodiments of the invention are related to a process for making contact elements for a probe card assembly. In some embodiments, the process can include forming a first continuous trench in a substrate along a first direction, and forming simultaneously a plurality of tip structures adjacent one to another in the first continuous trench in a second direction substantially normal to the first direction, each of the tip structures being part of, or adapted to be part of at least one corresponding contact element capable of forming an electrical contact with a terminal of an electronic device.

Embodiments of the invention are related to a tested die produced by a probe card assembly having contact elements made by a process. In some embodiments of the invention, the process includes forming a first continuous trench in a substrate along a first direction, forming a photoresist layer over the first continuous trench using a photomask shielding at least one end of the first continuous trench from being exposed to light during the lithographic process, and depositing conductive materials in openings of the photoresist layer for forming simultaneously a plurality of tip structures adjacent one to another in the first continuous trench in a second direction substantially normal to the first direction, each of the tip structures being part of, or adapted to be part of at least one corresponding contact element capable of forming an electrical contact with a terminal of an electronic device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-9 illustrate a process for making contact elements in accordance with some embodiments of the invention.

FIGS. 10-17 illustrate various contact elements made by processes in accordance with some embodiments of the invention.

FIG. 18 illustrates an exemplary probe card assembly in which the contact elements made by the processes in accordance with some embodiments of the invention can be implemented.

FIG. 19 illustrates an exemplary system where a probe card assembly can be implemented with the contact elements made by the processes in accordance with some embodiments of the invention.

Where possible, identical reference numbers are used herein to designate elements that are common to the figures. The images used in the drawings may be simplified for illustrative purposes and are not necessarily depicted to scale.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

This specification describes exemplary embodiments and applications of the invention. The invention, however, is not limited to these exemplary embodiments and applications or to the manner in which the exemplary embodiments and applications operate or are described herein. Moreover, the figures can show simplified or partial views, and the dimensions of elements in the figures can be exaggerated or otherwise not in proportion for clarity. In addition, as the terms “on” and “attached to” are used herein, one object (e.g., a material, a layer, a substrate, etc.) can be “on” or “attached to” another object regardless of whether the one object is directly on or attached to the other object or there are one or more intervening objects between the one object and the other object. Also, directions (e.g., above, below, top, bottom, side, up, down, over, under, “x,” “y,” “z,” etc.), if provided, are relative and provided solely by way of example and for ease of illustration and discussion and not by way of limitation. In addition, where reference is made to a list of elements (e.g., elements a, b, c), such reference is intended to include any one of the listed elements by itself, any combination of less than all of the listed elements, and/or a combination of all of the listed elements.

Embodiments of the invention can relate to processes for making a plurality of contact elements having their tip structures simultaneously formed in a continuous trench of a substrate. The continuous trench can be configured to provide the contact elements with tip structures capable of forming pressure contacts with terminals or bond pads of an electronic device. The processes can prevent undesired cross-link of a photoresist material during a lithographic step when forming the contact elements, and enable them to be made in a fine pitch, which is important for testing electronic devices of continuously shrinking scales.

FIGS. 1-9 illustrate a process for making contact elements for probe card assemblies in accordance with some embodiments of the invention. FIG. 1 shows a step in the process where a continuous trench 102 is formed in a substrate 100. The substrate 100 can comprise a semiconductor material, such as silicon, or any other materials suitable to serve as a sacrificial layer where a continuous trench can be formed for constructing contact elements thereon. A first photoresist layer 104 can be formed on the substrate 100 through a lithographic process. The first photoresist layer 104 can have an opening 106 defining the continuous trench 102. An etching process can be performed to remove the portion of the substrate 100 exposed by the opening 106 to from the continuous trench 102. In some embodiments of the invention, a crystallographic etching can be performed to provide sidewalls 108 of the continuous trench 102 with a desired slope. An etchant, such as KOH, can be used in the crystallographic etching process. Due to etch rate selectivity among crystal planes of the substrate 100, the sidewalls 108 can be controlled in a desired range of angle and profile, which, as will become clear in following paragraphs, can be advantageous in making the contact elements. Alternatively, in some other embodiments of the invention, milling, dry etching, wet etching, or a combination thereof can be used to form the continuous trench 102. Process settings and conditions of these techniques can be controlled to provide the continuous trench 102 with the sidewalls 108 in a desired range of angle and profile. Non-limiting examples of the settings and conditions can include temperature, choices of etchant, flow rate of etchant, electrical or magnetic fields applied, etc. It is noted that the etching technique used can have characteristics of isotropic etching, anisotropic etching, or both.

It is noted that although only one continuous trench 102 in the substrate 100 is illustrated, the number thereof can be more than one. Accordingly, the first photoresist layer 104 can have more than one opening in order to define more than one continuous trench.

After the formation of the continuous trench 102, the first photoresist layer 104 can be removed, and a seed layer 110 can be formed on and/or over the substrate 100, as shown in FIG. 2. In some embodiments of the invention, the seed layer 110 can comprise aluminum, copper, titanium, other suitable materials, and a combination thereof.

A second photoresist layer 112 can be formed over the seed layer 110 as shown in FIGS. 3 and 4 where FIG. 3 is a cross-sectional view of the structure along line A-A in FIG. 4. The second photoresist layer 112 can be disposed on the seed layer 110 through techniques such as spin coating, spray coating, electrophoretical deposition, or other suitable techniques. A photomask 114 having one or more predetermined openings 116 can be placed above the second photoresist layer 112 during a lithographic process. In some embodiments of the invention, the second photoresist layer 112 can be made of a negative photoresist material, which hardens when exposed to light. During the lithographic process, portions 112 a of the second photoresist layer 112 cross link and harden when they are exposed to light through the openings 116 of the photomask 114. Once the exposed portions 112 a of the second photoresist layer 112 become hardened, the unexposed regions of the photoresist layer 112 can be removed through developing processes. In some embodiments of the invention, the second photoresist layer 112 can be made of positive photoresist materials, which soften when exposed to light. The exposed positive photoresist materials can then be developed away leaving the unexposed regions on the seed layer 110. It is noted that although the photomask 114 is illustrated as having only three openings 116 over the continuous trench 102, the number thereof can be more or less than three.

The photomask 114 is designed to protect the second photoresist layer 112 from undesired photo interference due to sidewall deflections during the lithographic process. The photomask 114 can shield one or more ends of the continuous trench 102 in the longitudinal direction, thereby preventing light from hitting sidewalls 108 thereof and being deflected to blur the pattern transferred from the photomask 114 to the second photoresist layer 112. This enables the exposed portions 112 a of the second photoresist layer 114 to harden in a desired manner, thereby creating a desired pattern of openings during the lithographic process.

FIG. 5 illustrates a cross-sectional view of the substrate 100 and the remaining portions 112 a of the second photoresist layer 112 along a line A-A as shown in FIG. 4. One or more conductive layers can be formed on the seed layer 110 by techniques, such as electroplating or chemical vapor deposition. In some embodiments of the invention, a first conductive layer 118, a second conductive layer 120, and a third conductive layer 122 can be formed on the seed layer 110 sequentially. The first, second, and third conductive layers 118, 120 and 122 can comprise palladium, cobalt, nickel, gold, rhodium, other metallic materials, and/or any combination thereof. Specifically, the first layer 118 can comprise palladium-cobalt, and their alloys, the second layer 120 nickel-cobalt, and their alloys, and the third layer 122 gold and its alloys. The first layer 118 can be made of a material suitable for forming an electrical contact with a terminal or bond pad of a DUT, as well as a material suitable for resiliency. The second layer 120 can be made of a material having spring characteristics to provide desired resiliency for the entire structure of the first, second and third layers 118, 120, and 122.

It is noted that although three conductive layers are illustrated in FIG. 5, the number thereof can be more or less than three. It is further noted that in some embodiments of the invention, the seed layer 100 can be optional depending on the sacrificial substrate used. For example, a metal sacrificial substrate with machined or etched continuous trenches can serve as an electroplated surface without a seed layer.

Conventionally, a single contact element is usually formed in a single trench, and therefore cannot be placed in close proximity with other contact elements since the trenches are aniostropically tapered with a larger opening at the top than the bottom. Thus, the pitch of the contact elements made by conventional methods can be quite large. Moreover, the conventional methods do not necessarily require a photomask that shields one or more ends of a continuous trench for purposes of preventing undesired cross-link of a photoresist material during a lithographic process when forming the contact elements.

FIG. 6 illustrates a cross-sectional view of the substrate 100, on which a stack of seed layer 110, first conductive layer 118, second conductive layer 120, and third conductive layer 122 are constructed, along a line B-B as shown in FIG. 4. The cross-sectional view in FIG. 6 shows a profile of a contact element 200 in the making. The contact element 200 can comprise a tip structure 202 constructed upon the seed layer 110, and formed by first conductive layer 118, second conductive layer 120, and third conductive layer 122 in the continuous trench 102, and a beam structure 204 constructed by the same layers extending from or attached to the tip structure 202 along the surface of the substrate 100 outside the continuous trench region.

As shown in the drawing, the sloped sidewalls 108 of the continuous trench 102 can configure the tip structure 202 into a V shape with a tapered tip (as shown at the bottom of the drawing) suitable to form a pressure contact with a terminal or bond pad of a DUT (not shown in the figure). This tapered tip can be advantageous in applying a large amount of pressure to break a possible oxide layer formed on the terminal or bond pad, thereby lowering the resistance there between. In some embodiments of the invention, the bottom surface 206 of the continuous trench 102, which defines the contact area between the tip and the terminal or bond pad of the DUT, can be made wider or narrower by way of design choice in order to create various degrees of tip pressure the structure 102 may apply. In some embodiments of the invention, the tip structure 202 can extend over the entire continuous trench 102 in a transverse direction. In some other embodiments, the tip structure 202 can be made in various lengths at the continuous trench 102 without running over it entirely. Details of those embodiments will be discussed in following paragraphs.

FIG. 7 illustrates a perspective view of a plurality of contact elements 200 made simultaneously in the continuous trench 102 with the remaining portions 112 a of the second photoresist layer 112 omitted in order to better demonstrate how the process according to embodiments of the invention is able to simultaneously fabricate a plurality of tip structures 202 of the contact elements 200 in a fine pitch. For example, the space between two neighboring tip structures 202 can range approximately from 20 to 100 μm. As shown in the drawing, each of the tip structures 202 can have a width W much smaller than its depth D. In some embodiments of the invention, the depth to width ratio can range approximately from 1 to 15, and in some embodiments, the ratio can be from approximately 10 to 15. In some embodiments of the invention, the tip structures 202 can be arranged in a pitch as fine as a lithographic process allows. This enables a probe card assembly implemented with those tip structures to test the DUTs having terminals in a fine pitch layout. Moreover, the alignment of the tip structures formed along the length of the trench can be extremely precise relative to each other in a direction transverse to the trench in which they were formed because the tip structures were formed in the same continuous trench.

It is noted that although only two contact elements 200 with their corresponding tip structures 202 in a continuous trench 102 are illustrated, the number thereof for a single continuous trench can be more than two. It is also noted that although the contact elements 200 are drawn as having an identical shape and length, in some embodiments of the invention, their shapes and lengths can be different. It is also noted that materials 203 deposited or plated at two ends of the continuous trench 102 are formed as a result of the photomask 114 that is configured to shield light from the ends in order to prevent cross-link of the photoresist layer 112 during a lithographic step shown in FIG. 7.

FIG. 8 illustrates a cross sectional view where a third photoresist layer 210 having one or more predetermined openings is formed over the beam structure 204 and the tip structure 202 through techniques such as spin coating, spray coating, electrophoretical deposition, or other suitable techniques in accordance with some embodiments of the invention. Conductive materials can be deposited into the opening of the third photoresist layer 210 to form a post 208 on the beam structure 204. The beam structure 204 can include a first portion immediately adjacent to its corresponding tip structure 202 and a second portion away from its corresponding tip structure 202. The second portion of the beam structure 204 can be wider than the first portion, as shown in FIG. 7. The wider second portion of the beam structure 204 allows for easy alignment between the post 208 and the beam structure 204, thereby facilitating the formation of the post 208 thereon. Thereafter, the remaining portion 112 a of the second photoresist layer 112 and the third photoresist layer 210, and the substrate 100 can be removed using etch techniques to un-mask the contact element 200 that includes the tip structure 202, the beam structure 204, and the post 208. Note that in some embodiments, the second portion can be narrower than the first portion.

FIG. 9 illustrates a perspective view of a plurality of contact elements 200 made by utilizing a continuous trench in accordance with some embodiments of the invention. Each of the contact elements 200 can be resilient in forming an electrical contact between its tip structure 202 and a terminal or bond pad of a DUT (not shown in the figure). The beam structure 204 can deflect when the tip structure 202 is pressed against the DUT, and return or return substantially to its original position when it is moved away from the DUT. Proper materials can be selected to improve the reliability of the beam structure 204. For example, the beam structure 204 can comprise materials, such as palladium, cobalt, nickel, gold, rhodium, other metallic materials, and/or any combination thereof. As such, the process according to embodiments of the invention is able to make contact elements that are resilient and/or reliable in a fine pitch. In some embodiments of the invention, there can be more than one post 208 attached to each tip structure 202. In some embodiments, there can be a space formed in the beam structure 204 of each tip structure 202. A non-limiting example of such contact elements can be found in U.S. patent application Ser. No. 11/862172, entitled “Reduced Scrub Contact Element” filed on Sep. 26, 2007. Furthermore, all or portions of the tip structures 202 (for example, the “V” shaped portion) relative to each other can be precisely aligned along a line intersecting the tip structures 202 because they were formed in the same continuous trench. Conventional processes for making contact structures may differ from this because the individual trenches into which the tips were made are not continuous (which may result, for example, from mask position differences from one location to another across the mask).

It is noted that although FIGS. 1-9 illustrate a process for making the tip structures, beam structures, and posts in a sequence of process steps, they can be made in separate processes in some embodiments of the invention. For example, the tip structures can be made in a continuous trench in a set of process steps, and then separated from the continuous trench to become a “bucket” of loose tip structures adapted to be attached to their corresponding beam structures and/or posts in a separate set of process steps.

FIG. 10 illustrates a cross-sectional view of one of a plurality of contact elements 301 simultaneously formed in a continuous trench 306 in a substrate 302 by a process similar to that described above in accordance with some embodiments of the invention. The process can provide the contact element 301 with a tip structure 300 extending along one side of the continuous trench 306 without reaching an opposite side thereof in a transverse direction. Such tip structure 300 can shorten the length of the contact element 301 in accommodation of a predetermined space requirement.

In some embodiments of the invention, the tip structure 300 of the contact element 301 can be made by using a positive photoresist material in a lithographic process. The lithographic process can be controlled to select a desired photomask pattern and exposure/development conditions to form a photoresist layer 307 on one side of the trench 309. Since a positive photoresist material remains if shielded away from light, the formation of the photoresist layer 307 on one side of the trench 309 would not cause undesired cross-linking of a photoresist material on the other side thereof due to deflection of light from the sidewall of the trench 307.

In some embodiments of the invention, the tip structure 300 can be made by using a buried anti-reflective coating (BARC) (not shown in the figure) on one side of the trench 307 during a lithographic process. When exposed to light, BARC can absorb it and reflect no or a negligible amount of light. When forming the tip structure 300, BARC can be disposed underneath an undeveloped photoresist material on one side of the trench 307. During a development step, the BARC can eliminate undesired reflection of light between the sidewalls of the trench 309, and therefore prevent undesired cross-link of the photoresist material from occurring. This allows for the tip structure 300 to be formed on only one side of the trench 309. Note that BARC is often used together with a negative photoresist material. However, in some instances, it may be used together with a positive photoresist material.

FIG. 11A illustrates a cross-sectional view of one of many contact elements 404 simultaneously formed in a continuous trench 406 in a substrate 402 by a process similar to that described above in accordance with some embodiments of the invention. The process can provide the contact element 404 with a tip structure 400 extending along one side of the continuous trench 406, reaching but not stretching over an opposite side thereof. Such tip structure 400 can be used to adjust the length of the contact element 404 in accommodation of a predetermined space requirement. In some embodiments of the invention, surfaces 402 a and 402 b at both sides of the continuous trench 406 can be made at the same height as shown in the figure. In some embodiments of the invention, the surface 402 b at one side of the continuous trench 406 can be made lower or higher than the surface 402 a at the other side.

FIG. 11B illustrates a top view of a plurality of contact elements 410 simultaneously formed in a continuous trench 412 having a corner 414 in accordance with some embodiments of the invention. The contact elements 410 a placed at the corner 414 can have their tip structures shorter than the width D1 of the continuous trench 412. For example, the contact elements 410 a can be similar to that shown in FIG. 11A. Thus, the corner 414 of the continuous trench 412 can be utilized to build the contact elements 410, thereby providing flexibility in laying out the contact elements, and increasing the spacing density of the contact elements 410. In some embodiments of the invention, an outer part of the corner 414 can be protected by a shield (not shown) to avoid undesired cross-link of a photoresist material during a lithographic process. As such, a material 416 can be incidentally formed at part of the corner 414 simultaneously with the contact elements 410 during a plating or depositing process as a result of the shield being used in a preceding lithographic process. An end of the contact element 410 a can be configured to approximate the profile of the continuous trench 412 at the inner part of the corner 414. This can be advantageous in reducing undesired cross-link of a photoresist material at the inner part 418 of the corner 414 during a lithographic process. In some embodiments of the invention, the end of the contact element 410 a at the inner part 418 of the corner 414 can have a square end or other configurations. These configurations can be formed generally by a process described above. Because the inner ends of the contact elements 410 a can be placed closely together, the risk of cross-linking can be reduced to a manageable degree for the various configurations.

FIG. 12 illustrates a top view of a plurality of tip structures 500 simultaneously formed in a continuous trench 502 in a direction substantially normal to a longitudinal direction of the continuous trench 502 by a process similar to those described above in accordance with some embodiments of the invention. Each of the tip structures 500 can be arranged on one side of the continuous trench in alignment with another of the tip structures 500 on an opposite side of the continuous trench. In such arrangement, a tip structure 500 on one side can function as a shield to prevent another tip structure 500 on the other side from photo interference during a lithographic process. As a result, undesired cross-link of a photoresist material during the lithographic process can be avoided. It is noted that materials at the ends of the continuous trench 502 can be formed as a result of an anti-deflection shield used in a lithographic process when constructing the contact elements 500.

FIG. 13 illustrates a top view of a plurality of tip structures 600 simultaneously formed in a continuous trench 602 in a direction substantially normal to a longitudinal direction of the continuous trench 602 by a process similar to those described above in accordance with some embodiments of the invention. Each of the tip structures 600 can be arranged on one side of the continuous trench 602 in alignment with another of the tip structures 600 or a “dummy” structure 604 on an opposite side of the continuous trench 602. A “dummy” structure refers to any structure formed in the continuous trench 602 without any active functions, e.g., forming an electrical contact with a terminal or bond pad of an electronic device, other than matching a normally functioning contact element 600 on an opposite side of the continuous trench 602 in order to prevent undesired cross-link during a lithographic process. In such arrangement, a tip structure 600 or dummy structure 604 on one side can function as a shield to prevent another tip structure 600 on the other side from photo interference during a lithographic process. It is noted that materials at the ends of the continuous trench 602 can be formed as a result of an anti-deflection shield used in a lithographic process when constructing the contact elements 600.

FIG. 14A illustrates a top view of a plurality of tip structures 700 simultaneously formed in a first continuous trench 702 in a direction substantially normal to a longitudinal direction of the continuous trench 702 by a process in accordance with some embodiments of the invention. One or more second trenches 704 depicted by dotted lines can be formed on the bottom surface of the continuous trench 702. In some embodiments of the invention, the second trenches 704 can be formed in alignment with each other by lithographic and etching processes.

FIG. 14B illustrates a perspective view of one of the tip structures 700 removed from the continuous trench 702. The tip structure 700 can comprise a tip 706 protruding from a surface thereof. The tip 706 can be formed by conductive materials deposited into the second trench 704. The tip 706 can take various configurations depending on the shape of the second trenches 704. For example, the tip 706 can have a pyramid or mesa shape where the peak of the tip 706 is smaller than the base. In some other embodiments of the invention, the tip can have a cubic shape such as the tip 708 shown in FIG. 14C.

FIG. 15A illustrates a top view of a plurality of tip structures 800 simultaneously formed in a first continuous trench 802 in a direction substantially normal to a longitudinal direction of the first continuous trench 802 by a process in accordance with some embodiments of the invention. At least one second continuous trench 804 can be formed on the bottom surface of the first continuous trench 802. Each of the tip structures 800 can be disposed across the second continuous trench 804. In some embodiments of the invention, there can be two or more second continuous trenches 804 formed in the first continuous trench 802, where each of the second continuous trenches 804 can be used to form tips for one or more tip structures. FIG. 15B illustrates a perspective view of one of the tip structures 800 removed from the first and second continuous trenches 802 and 804 where the tip 806 has a ridge configured on an elevated surface of the tip structure 800. It is noted that although the second continuous trenches are illustrated as having only one level in FIG. 4, multiple levels can be employed to fabricate tip structures in a multi-staged manner.

The tip, which may take various shapes as described above, can apply a high pressure when forming an electrical contact with a terminal or bond pad of a DUT. As discussed above, such pressure contact can be advantageous, because it helps the tip structure to break a possible oxide layer often formed on a terminal or bond pad of a DUT, thereby lowering the resistance there between. The second continuous trench formed in the first continuous trench can increase the height of the tip structure. This in turn increases the allowable travel distance of the tip structure when the contact element is pressed again a DUT, thereby increasing the pressure exerted by the tip structure of the contact element to the DUT. Moreover, the second continuous trench can modify a tip formation line of the tip structures defined by the first continuous trench, thereby ensuring proper contacts to be formed between the tip structures and their corresponding terminals or bond pads of the DUT.

FIG. 16 illustrates a top view of a plurality of tip structures 810 simultaneously formed in a first continuous trench 812 by a process in accordance with some embodiments of the invention. One or more second trenches 814 depicted by dotted lines can be formed on the bottom surface of the first continuous trench 812. In some embodiments of the invention, the second trenches 814 can be arranged in two or more rows. A number of dummy structures 816 can be employed to prevent cross-link during a lithographic process. In some embodiments of the invention, ones of the second trenches 814 can have an elongated shape extending across two or more neighboring tip structures 810.

FIG. 17 illustrates a cross-sectional view of a contact element 900 fabricated by a process in accordance with some embodiments of the invention. The contact element 900 can include a tip structure 902 to which two beams 904 a and 904 b are attached at two sides thereof. Posts 906 a and 906 b are attached to the beams 904 a and 904 b, respectively. The beams 904 a and 904 b and the posts 906 a and 906 b can provide the tip structure 902 with double suspensions that decrease the probe scrub ratio, stabilize the spring during over travel to prevent buckling at fine pitch probing requirements such as 20 um pitch probing layouts, thereby providing reliable contacts with a DUT. For example, a conventional double suspended contact element disclosed in U.S. Pat. No. 6,426,638, entitled “Compliant Probe Apparatus,” would have a larger probe scrub ratio than the contact elements 900, as the conventional tip structure is on the side of the double suspension beams, whereas the tip structure 902 is directly underneath the beams 904 a and 904 b.

It is noted that the contact element 900 illustrated in the drawing can be fabricated in a process where a plurality of tip structures are made simultaneously in a continuous trench. Although the tip structure 902 is shown to be supported by two beams, the number thereof can be more than two in some embodiments of the invention.

FIG. 18 shows a cross sectional view of an exemplary probe card assembly 18, in which contact elements made by a process in accordance with some embodiments of the invention can be implemented. The probe card assembly 18 can be configured to provide both electrical pathways and mechanical support for contact elements 16 that will directly contact a DUT. The probe card electrical pathways can be provided through a printed circuit board (PCB) 30, an interposer 32, and a space transformer 34. Test data can be provided through flexible cable connectors 24 typically connected around the periphery of the PCB 30. Channel transmission lines 40 can distribute signals from the connectors 24 horizontally in the PCB 30 to contact pads on the PCB 30 to match the routing pitch of pads on the space transformer 34. The interposer 32 can include a substrate 42 with spring probe electrical contacts 44 disposed on both sides. The interposer 32 can electrically connect individual pads 31 on the PCB 30 to pads forming a land grid array (LGA) on the space transformer 34. Traces 46 in a substrate 45 of the space transformer 34 can distribute or transform pitches of connections from the LGA to spring contact elements 16 configured in an array. The space transformer substrate 45 can be constructed from either multi-layered ceramic or organic based laminates. The space transformer substrate 45 with embedded circuitry, contact elements and LGA can be referred to as a probe head.

Mechanical support for the electrical components can be provided by a back plate 50, bracket (Probe Head Bracket) 52, frame (Probe Head Stiffener Frame) 54, leaf springs 56, and leveling pins 62. The back plate 50 can be provided on one side of the PCB 30, while the bracket 52 can be provided on the other side and attached by screws 59. The leaf springs 56 can be attached by screws 58 to the bracket 52. The leaf springs 56 can extend to movably hold the frame 54 within the interior walls of the bracket 52. The frame 54 then includes horizontal extensions 60 for supporting the space transformer 34 within its interior walls. The frame 54 can surround the probe head and maintain a close tolerance to the bracket 52 such that lateral motion can be limited.

Leveling pins 62 provide the mechanical support for the electrical elements and provide for leveling of the space transformer 34. The leveling pins 62 can be adjusted so that brass spheres 66 provide a point contact with the space transformer 34. The spheres 66 contact outside the periphery of the LGA of the space transformer 34 to maintain isolation from electrical components. Leveling of the substrate can be accomplished by precise adjustment of these spheres through the use of advancing screws, or leveling pins 62. The leveling pins 62 can be screwed through supports 65 in the back plate 50 and PCB 30. Motion of the leveling pin screws 62 can be opposed by leaf springs 56 so that spheres 66 are kept in contact with the space transformer 34. Examples of such probe card assembly 18 can be found and described in greater detail in, for example, U.S. Patent Application Publication No. 2007/0261009.

It is noted that the probe card assembly 18 is merely an example providing a context in which the contact elements according to embodiments of the invention can be applied. The designs of the probe card assembly can vary. For example, the probe card assembly can have multiple separate substrates to which the contract elements are attached. These various probe cards designs can all use the proposed contact elements to form electrical contacts of a DUT.

FIG. 19 illustrates an exemplary test system 1000, in which a probe card assembly implemented the proposed contact structure can be employed, in accordance with some embodiments of the invention. As shown in FIG. 19, the test system 1000 can include a tester 1002. Test system 1000 can also include a probe card assembly 1018 comprising probes 1024 disposed to contact a substrate 1026. Communications channels can be provided between the tester 1002 and the probe card assembly 1018 by communications connection 1004, test head 1006, and electrical connections 1016. That is, communications connection 1004 (e.g., coaxial cables, fiber optics, wireless transmitters/receivers) can provide electrical signal paths between the tester 1002 and the test head 1006, which can include driver/receiver circuits 1010 and an interface board 1012. The driver/receiver circuits 1010 can be configured to receive signals sent by the tester 1002 through the communications connection 1004 to the test head 1006, and the driver/receiver circuits 1010 can also be configured to drive signals from the test head 1006 through the communications connection 1004 to the tester 1002. The driver/receiver circuits 1010 can be electrically connected through the interface board 1012 to electrical connection 1016, which can electrically connect the test head 1006 to the probe card assembly 1018.

As shown in FIG. 19, the probe card assembly 1018 can be attached to and detached from a head plate 1020 of a prober 1034, which can comprise a housing or enclosure in which can be disposed, among other things, a movable chuck 1028 on which the substrate 1026 can be disposed. Chuck 1028 can thus constitute a holder for holding the substrate 1026 during testing of the substrate. (FIG. 19 includes cut away 1030, which provides a partial view into an interior of the prober 1034.)

Once the probe card assembly 1018 is attached to the head plate 1020 (which can comprise a top portion of the prober 1034) and electrically connected through electrical connections 1016 to the test head 1006 (e.g., to circuitry on the interface board 1012), chuck 1028 can move the substrate 1026 into contact with contact elements 1024 of the probe card assembly 1018 and thereby establishing temporary electrical connections between the contact elements 1024 and the substrate 1026. The chuck 1028 can be capable of moving in various directions and can be further capable of rotating and tilting. While the contact elements 1024 are in contact with the substrate 1026, the tester 1002 can provide test signals, power, and ground to the substrate 1026, and the tester 1002 can analyze response signal generated by the substrate 1026 in response to the test signals.

As mentioned, the probe card assembly 1018 can be attached to and detached from the head plate 1020 of the prober 1034. For example, the probe card assembly 1018 can be bolted, clamped, etc. to the head plate 1020, and thereafter the probe card assembly 1018 can be unbolted, unclamped, etc. The probe card assembly 1018 can also be electrically connected to and electrically disconnected from the electrical connections 1016. Thus, a probe card assembly 1018 can be attached to the head plate 1020, electrically connected to electrical connections 1016, and then used to test one or more substrates 1026. Thereafter, the probe card assembly 1018 can be detached from the head plate 1020, disconnected from the electrical connections 1016, and removed. A different probe card assembly (not shown) can then be attached to the head plate 1020 and electrically connected to the electrical connections 1016 and then used to test other substrates. The tester 1002 and test head 1006 (including any electronics in the test head 1006, such as the driver/receiver circuits 1010 and the interface board 1012) can thus remain in place and be used with different probe card assemblies (e.g., like 1018).

Although specific embodiments and applications of the invention have been described in this specification, there is no intention that the invention be limited these exemplary embodiments and applications or to the manner in which the exemplary embodiments and applications operate or are described herein. For example, particular exemplary test systems have been disclosed, but it will be apparent that the inventive concepts described above can apply equally to alternate arrangements of a test system. Moreover, while specific exemplary processes for testing an electronic device have been disclosed, variations in the order of the processing steps, substitution of alternate processing steps, elimination of some processing steps, or combinations of multiple processing steps that do not depart from the inventive concepts are contemplated. Accordingly, it is not intended that the invention be limited except as by the claims set forth below. 

1. A process for making contact elements for a probe card assembly, comprising: forming a first continuous trench in a substrate along a first direction; forming simultaneously a plurality of tip structures adjacent one to another in the first continuous trench in a second direction substantially normal to the first direction, each of the tip structures being part of, or adapted to be part of at least one corresponding contact element capable of forming an electrical contact with a terminal of an electronic device; and forming one or more second continuous trenches on a bottom surface of the first continuous trench for increasing a height for each of the tip structures and modifying a tip formation line of the tip structures defined by the first continuous trench.
 2. The process of claim 1 wherein the second continuous trenches provide at least one of the tip structures with a tip configured in pyramid, mesa, cubic, ridge, or other suitable shapes.
 3. A process for making contact elements for a probe card assembly, comprising: forming a first continuous trench in a substrate along a first direction; and forming simultaneously a plurality of tip structures adjacent one to another in the first continuous trench in a second direction substantially normal to the first direction, each of the tip structures being part of, or adapted to be part of at least one corresponding contact element capable of forming an electrical contact with a terminal of an electronic device, wherein at least one of the tip structures is formed along one side of the first continuous trench without reaching an opposite side thereof in the second direction.
 4. The process of claim 3 wherein the at least one of the tip structures is formed by using a positive photoresist material or a buried anti-reflective coating in a lithographic process.
 5. The process of claim 3 wherein at least one of the tip structures is arranged on one side of the first continuous trench in alignment with another of the tip structures on an opposite side of the first continuous trench.
 6. The process of claim 3 wherein at least one of the tip structures is arranged on one side of the first continuous trench in alignment with a dummy structure on an opposite side of the first continuous trench.
 7. A process for making contact elements for a probe card assembly, comprising: forming a first continuous trench in a substrate along a first direction; and forming simultaneously a plurality of tip structures adjacent one to another in the first continuous trench in a second direction substantially normal to the first direction, each of the tip structures being part of, or adapted to be part of at least one corresponding contact element capable of forming an electrical contact with a terminal of an electronic device, wherein at least one of the tip structures is formed along one side of the first continuous trench, reaching but not stretching over an opposite side thereof, in the second direction.
 8. A process for making contact elements for a probe card assembly, comprising: forming a first continuous trench in a substrate along a first direction; and forming simultaneously a plurality of tip structures adjacent one to another in the first continuous trench in a second direction substantially normal to the first direction, each of the tip structures being part of, or adapted to be part of at least one corresponding contact element capable of forming an electrical contact with a terminal of an electronic device, wherein each of the beams has a first portion immediately adjacent to its corresponding tip structure and a second portion away from its corresponding tip structure.
 9. The process of clam 8 wherein each of the tip structures is attached to at least two beams extending therefrom in different directions.
 10. The process of claim 9 further comprising forming at least two posts attached to the at least two beams, respectively.
 11. The process of claim 8 wherein each of the beams comprises palladium, cobalt, nickel, cobalt, gold, rhodium and any combination thereof.
 12. A tested die produced by a probe card assembly having contact elements made by a process comprising: forming a first continuous trench in a substrate along a first direction; forming a photoresist layer over the first continuous trench using a photomask shielding at least one end of the first continuous trench from being exposed to light during the lithographic process; and depositing conductive materials in openings of the photoresist layer for forming simultaneously a plurality of tip structures adjacent one to another in the first continuous trench in a second direction substantially normal to the first direction, each of the tip structures being part of, or adapted to be part of at least one corresponding contact element capable of forming an electrical contact with a terminal of an electronic device.
 13. The tested die of claim 12 wherein the forming a first continuous trench comprises performing an etching process to provide sidewalls of the first continuous trench with a predetermined slope.
 14. The tested die of claim 12 wherein the tip structures have a depth to width ratio ranging approximately from 1 to
 15. 15. The tested die of claim 12 further comprising forming one or more second continuous trenches on a bottom surface of the first continuous trench for increasing a height for each of the tip structures and modifying a tip formation line of the tip structures defined by the first continuous trench.
 16. The tested die of claim 15 wherein the second continuous trenches provide at least one of the tip structures with a tip configured in pyramid, mesa, cubic, ridge, or other suitable shapes.
 17. The tested die of claim 12 wherein at least one of the tip structures is formed along one side of the first continuous trench without reaching an opposite side thereof in the second direction.
 18. The tested die of claim 17 wherein the at least one of the tip structures is formed by using a positive photoresist material or a buried anti-reflective coating in a lithographic process.
 19. The tested die of claim 17 wherein at least one of the tip structures is arranged on one side of the first continuous trench in alignment with another of the tip structures on an opposite side of the first continuous trench.
 20. The tested die of claim 17 wherein at least one of the tip structures is arranged on one side of the first continuous trench in alignment with a dummy structure on an opposite side of the first continuous trench.
 21. The tested die of claim 12 wherein at least one of the tip structures is formed along one side of the first continuous trench, reaching but not stretching over an opposite side thereof, in the second direction.
 22. The tested die of claim 12 further comprising forming simultaneously a plurality of beams attached to their corresponding tip structures.
 23. The tested die of claim 22 wherein each of the beams has a first portion immediately adjacent to its corresponding tip structure and a second portion away from its corresponding tip structure.
 24. The tested die of clam 23 wherein each of the tip structures is attached to at least two beams extending therefrom in opposite directions.
 25. The tested die of claim 24 further comprising forming at least two posts attached to the at least two beams, respectively.
 26. The tested die of claim 20 wherein each of the beams comprises palladium, cobalt, nickel, cobalt, gold, rhodium and any combination thereof. 